4.6 Article

Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Review Physics, Applied

Third-generation infrared photodetector arrays

A. Rogalski et al.

JOURNAL OF APPLIED PHYSICS (2009)

Article Engineering, Electrical & Electronic

High-performance LWIR MBE-Grown HgCdTe/Si focal plane arrays

Richard Bornfreund et al.

JOURNAL OF ELECTRONIC MATERIALS (2007)

Article Engineering, Electrical & Electronic

Selective growth of CdTe on Si(211): First-principle calculations

Y. Huang et al.

JOURNAL OF ELECTRONIC MATERIALS (2007)

Article Engineering, Electrical & Electronic

High-quality large-area MBE HgCdTe/Si

J. M. Peterson et al.

JOURNAL OF ELECTRONIC MATERIALS (2006)

Review Physics, Multidisciplinary

HgCdTe infrared detector material: history, status and outlook

A Rogalski

REPORTS ON PROGRESS IN PHYSICS (2005)

Article Engineering, Electrical & Electronic

Nucleation of ZnTe/CdTe epitaxy on high-Miller-index Si surfaces

G Brill et al.

JOURNAL OF ELECTRONIC MATERIALS (2003)

Article Engineering, Electrical & Electronic

Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects

JB Varesi et al.

JOURNAL OF ELECTRONIC MATERIALS (2003)

Article Physics, Applied

Charge transport through a single tetracene grain boundary

JH Schön et al.

APPLIED PHYSICS LETTERS (2001)

Article Engineering, Electrical & Electronic

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 silicon substrates

JB Varesi et al.

JOURNAL OF ELECTRONIC MATERIALS (2001)