Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K

Temperature dependence of dark current (I-d) and photocurrent (I-ph) is reported for Si-based amorphous HgCdTe (a-MCT) infrared photoconductive detector at 80-300 K. It is indicated that an uncooled a-MCT infrared detector can be fabricated based on the Si-based a-MCT. To describe the transport process, the Mott and Davis model [Davis and Mott, Philos. Mag. 22, 903 (1970)] is proposed as the conducting model originally developed for amorphous silicon. A possible mechanism of the carrier transports is shown in the a-MCT materials. The transport transition between the localized and extended carriers leads to the maximal I-ph/I-d above 200 K. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638459]