期刊
APPLIED PHYSICS LETTERS
卷 98, 期 17, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3583446
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资金
- National Science Foundation (NSF) [DMR0520415, DMR09-09203]
- AFOSR [FA9550-08-1-0461]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0909203] Funding Source: National Science Foundation
Using x-ray photoemission spectroscopy (XPS) and current-voltage (I-V) measurements of Hg contacts we show that the surface electron accumulation layer of In2O3 can be removed by an oxygen plasma treatment. For the untreated sample, XPS measured a downward band bending toward the surface and a conduction band peak, and the I-V curve was linear which indicated the presence of a surface accumulation layer. After the treatment an upward bending, the absence of the conduction band peak, and a nonlinear I-V curve indicated the absence of the surface accumulation layer. The sheet resistance of the surface accumulation layer of > 45 k Omega was deduced from the increase of the total sheet resistance upon the treatment. The removal of the surface electron accumulation layer opens up the possibility to use Schottky contacts for electrical characterization and device applications of semiconducting In2O3. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583446]
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