相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Specific Contact Resistivity of Tunnel Barrier Contacts Used for Fermi Level Depinning
Arunanshu M. Roy et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts
Jenny Hu et al.
JOURNAL OF APPLIED PHYSICS (2010)
Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism
B. E. Coss et al.
APPLIED PHYSICS LETTERS (2009)
Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
Masaharu Kobayashi et al.
JOURNAL OF APPLIED PHYSICS (2009)
Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As
M. Kobayashi et al.
APPLIED PHYSICS LETTERS (2008)
Photocatalytic activity of dc magnetron sputter deposited amorphous TiO2 thin films
K. Eufinger et al.
APPLIED SURFACE SCIENCE (2007)
Mobility enhancement in strained p-InGaSb quantum wells
Brian R. Bennett et al.
APPLIED PHYSICS LETTERS (2007)
Band offsets of high K gate oxides on III-V semiconductors
J. Robertson et al.
JOURNAL OF APPLIED PHYSICS (2006)
Fermi-level depinning for low-barrier Schottky source/drain transistors
D Connelly et al.
APPLIED PHYSICS LETTERS (2006)
Antimonide-based compound semiconductors for electronic devices: A review
BR Bennett et al.
SOLID-STATE ELECTRONICS (2005)
An improved In-based ohmic contact to n-GaSb
JA Robinson et al.
SOLID-STATE ELECTRONICS (2004)
An accurate determination of barrier heights at the HfO2/Si interfaces
R Puthenkovilakam et al.
JOURNAL OF APPLIED PHYSICS (2004)
Formation of an electric dipole at metal-semiconductor interfaces
RT Tung
PHYSICAL REVIEW B (2001)
分享论文
