Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si(3)N(4)/Si at 1000 degrees C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the sp(2) graphitic structures. The films show ohmic behavior with a sheet resistance of similar to 2.3-10.5 k Omega/square at room temperature. An electric field effect of similar to 2-10% (V(G)=-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3602921]