期刊
APPLIED PHYSICS LETTERS
卷 98, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3567946
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资金
- Foundation for the Author of National Excellent Doctoral Dissertation of People's Republic China [200752]
- Natural Science Foundation of Zhejiang province [0804201051]
Oxide-based thin-film transistors (TFTs) with in-plane gate structure are self-assembled on paper substrates at room temperature by using only one nickel shadow mask. Indium-tin-oxide (ITO) channel and ITO electrodes (gate, source, and drain) can be deposited simultaneously without precise photolithography and alignment process. The equivalent field-effect mobility, subthreshold swing, and on/off ratio of such paper TFTs are estimated to be 22.4 cm(2)/V s, 192 mV/decade, and 8 x 10(5), respectively. A model based on two capacitors in series is proposed to further understand the operation mechanism. (c) 2011 American Institute of Physics. [doi:10.1063/1.3567946]
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