Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride

We investigate key electrical properties of monolayer graphene assembled by chemical vapor deposition (CVD). Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO(2). Small-signal transconductance (g(m)) and effective carrier mobility (mu(eff)) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO(2). Compared with GFET with exfoliated graphene on SiO(2), g(m) and mu(eff) measured from device with CVD graphene on h-BN substrate exhibit comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3604012]