相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
Yi Zhou et al.
APPLIED PHYSICS LETTERS (2010)
A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film
Tomonori Nishimura et al.
APPLIED PHYSICS EXPRESS (2008)
Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
Yi Zhou et al.
APPLIED PHYSICS LETTERS (2008)
Ohmic contact formation on n-type Ge
R. R. Lieten et al.
APPLIED PHYSICS LETTERS (2008)
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Tomonori Nishimura et al.
APPLIED PHYSICS LETTERS (2007)
Fermi-level pinning and charge neutrality level in germanium
A. Dimoulas et al.
APPLIED PHYSICS LETTERS (2006)
Influence of Ge addition on the morphology and properties of TiN thin films deposited by magnetron sputtering
CS Sandu et al.
THIN SOLID FILMS (2006)
Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates
DD Han et al.
MICROELECTRONIC ENGINEERING (2005)
Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes
J Westlinder et al.
MICROELECTRONIC ENGINEERING (2004)