4.6 Article

Vertical ZnO nanorod/Si contact light-emitting diode

期刊

APPLIED PHYSICS LETTERS
卷 98, 期 9, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3562608

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  1. Ministry of Education, Science, and Technology (MEST) [2010-0000751, 2010-00218]
  2. Russian Ministry of Science and Education [02.740.11.5215]
  3. National Research Foundation of Korea [2009-00454, 2008-0060607] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Blue-white light emission was obtained from glass/indium tin oxide (ITO)/n-ZnO nanorod array (NRA)/p(+)-Si vertical contact light emitting diodes (VCLEDs). The nanoscale p-n heterojunction VCLEDs were formed by direct engagement n(-)-tips of n-ZnO NRA grown vertically on an ITO/glass substrate with p(+)-Si wafer. Proposed configuration of the VCLED allows creating a high density (similar to 10(9) cm(-2)) of self-assembled ZnO/Si nanodiodes with point junctions of high quality due to structural perfection of the Si wafer and the tips of ZnO nanorods as well as providing a high injection current and light emission from the NRA VCLED required for solid state lighting. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562608]

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