期刊
APPLIED PHYSICS LETTERS
卷 98, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3549301
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资金
- Office of Naval Research (ONR) [N000 14-09-1-0908, N000 14-09-1-0909]
- National Science Foundation (NSF) [DMR-0548182, 0618242, DGE-0549417, DMR-0810119, ECCS-0925844]
- U.S. Department of Energy (DOE) [DE-SC0001878]
- Texas Advanced Computing Center
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925844] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0810119] Funding Source: National Science Foundation
We have grown epitaxial strained LaCoO3 on (100)-oriented silicon by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO3 on silicon is ferromagnetic with a T-C of 85 K. First principles calculations suggest that a ferromagnetic ground state can be stabilized in LaCoO3 by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO6 octahedra. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549301]
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