期刊
APPLIED PHYSICS LETTERS
卷 98, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3571439
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资金
- National Science Council of ROC [97-2221-E-002-229-MY3]
The influences of defects and surface roughness on the indirect bandgap radiative transition of Ge were studied. Bulk Ge has 15 times the integrated intensity of photoluminescence of Ge-on-Si. However, for Ge-on-Si sample, the direct transition related photoluminescence intensity is higher than the indirect transition related one. We affirm that the defects in the Ge-on-Si are responsible for the weak indirect transition and relatively strong direct transition. The scattering of electrons by roughness at Ge/oxide interface can provide extra momentum of the indirect band transition of Ge, and thus enhance the indirect radiative transition. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3571439]
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