期刊
APPLIED PHYSICS LETTERS
卷 98, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3549299
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资金
- NBRP [2010CB923401, 2011CB302004, 2009CB623200]
- NSF [11074035, 20873019]
- SRFDP [20090092110025]
- Outstanding Young Faculty Grant
- Peiyu Foundation of SEU in China
Ab initio calculations show that the GaN monolayer (GaN-ML) in (0001) face is a planar semiconductor with an indirect band gap of 1.95 eV. The gap converts into a direct one and is enlarged by 0.81 eV when the GaN-ML is modified by H and F atoms. Furthermore, the gap can be efficiently manipulated in a range of 1.8 to 3.5 eV by applying an external electric field. Moreover, because of the spontaneous polarization, the gap is remarkably broadened by a positive electric field while it is rapidly decreased under a negative field. The chemical modification also significantly improves the stability of GaN-ML. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549299]
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