期刊
APPLIED PHYSICS LETTERS
卷 99, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3641907
关键词
gallium arsenide; heterodyne detection; III-V semiconductors; indium compounds; semiconductor diodes; terahertz wave imaging
资金
- Lithuanian Research Council [MIP-85/2010]
- BMBF
- WI Bank Hessen
- Alexander von Humboldt-Stiftung
Room-temperature detection and imaging in transmission and reflection geometries at 0.591 THz with planar asymmetrically shaped InGaAs diodes (also called bow-tie diodes) are demonstrated in direct and heterodyne mode. The sensitivity of the diodes is found to be 6 V/W in direct mode, and the noise-equivalent power (NEP) in direct and heterodyne mode is estimated to be about 4 nW/root Hz and 230 fW/Hz for a local-oscillator power of 11 mu W, respectively. The improvement of the dynamic range by heterodyning over direct power detection amounts to about 20 dB using pixel read-out times relevant to real-time imaging conditions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641907]
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