4.6 Article

Terahertz heterodyne imaging with InGaAs-based bow-tie diodes

期刊

APPLIED PHYSICS LETTERS
卷 99, 期 13, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3641907

关键词

gallium arsenide; heterodyne detection; III-V semiconductors; indium compounds; semiconductor diodes; terahertz wave imaging

资金

  1. Lithuanian Research Council [MIP-85/2010]
  2. BMBF
  3. WI Bank Hessen
  4. Alexander von Humboldt-Stiftung

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Room-temperature detection and imaging in transmission and reflection geometries at 0.591 THz with planar asymmetrically shaped InGaAs diodes (also called bow-tie diodes) are demonstrated in direct and heterodyne mode. The sensitivity of the diodes is found to be 6 V/W in direct mode, and the noise-equivalent power (NEP) in direct and heterodyne mode is estimated to be about 4 nW/root Hz and 230 fW/Hz for a local-oscillator power of 11 mu W, respectively. The improvement of the dynamic range by heterodyning over direct power detection amounts to about 20 dB using pixel read-out times relevant to real-time imaging conditions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641907]

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