期刊
APPLIED PHYSICS LETTERS
卷 98, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3551628
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资金
- National Science Foundation [ECCS-0900978]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [900971, 0900978] Funding Source: National Science Foundation
ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements. (c) 2011 American Institute of Physics. [doi:10.1063/1.3551628]
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