期刊
APPLIED PHYSICS LETTERS
卷 99, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3643050
关键词
band structure; elemental semiconductors; infrared spectra; semiconductor doping; silicon; sulphur; X-ray emission spectra
资金
- Chesonis Family Foundation
- U.S. Army-ARDEC [W15QKN-07-P-0092]
- U.S. Army Research Office [W911NF-09-1-0470]
- Impuls-und Vernetzungsfonds of the Helmholtz-Association [VH-NG-423]
- National Science Foundation
- Fulbright fellowship
- Department of Defense National Defense Science and Engineering
- Department of Energy, Basic Energy Sciences [DE-AC02-05CH11231]
We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L-2,L-3 emission features are observed above the conventional Si valence band maximum, with intensity scaling linearly with S concentration. The lineshape of the S-induced features change across the insulator-to-metal transition, indicating a significant modification of the local electronic structure concurrent with the change in macroscopic electronic behavior. The relationship between the Si L-2,L-3 XES spectral features and the anomalously high sub-band gap infrared absorption is discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3643050]
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