期刊
APPLIED PHYSICS LETTERS
卷 98, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3593131
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资金
- National Science Foundation (NSF) [ECCS-1002228, ECCS-1028267]
- IBM
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1002228] Funding Source: National Science Foundation
We demonstrated doping in monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on two-dimensional graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing. (C) 2011 American Institute of Physics. [doi:10.1063/1.3593131]
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