期刊
APPLIED PHYSICS LETTERS
卷 98, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3592577
关键词
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资金
- MSD under SRC, Nanoelectronics Research Initiative through MIND
- NSF [EEC-0228390]
- Purdue University
Lead Selenide (PbSe) is an attractive 'IV-VI' semiconductor material to design optical sensors, lasers, and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the band structure of PbSe NWs is studied using an 18 band sp(3)d(5) tight-binding theory. The band gap increases almost with the inverse of the W for all the orientations indicating weak symmetry dependence. [111] and [110] NWs show higher ballistic conductance for the conduction and valence band compared to [100] NWs due to the significant splitting of the projected L-valleys in [100] NWs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592577]
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