期刊
APPLIED PHYSICS LETTERS
卷 98, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3567021
关键词
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资金
- MARCO/MSD
- NSF Center for Energy Efficient Electronics Science
- LDRD from LBNL
- Sloan research fellowship
- Robert Noyce Intel Foundation
An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach is used for the formation of a p(+) source contact which minimizes lattice damage to the ultrathin body InAs compared to ion implantation. The transistor exhibits gated negative differential resistance behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. The work presents a device and materials platform for exploring III-V tunnel transistors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567021]
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