相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Competitiveness between direct and indirect radiative transitions of Ge
T. -H. Cheng et al.
APPLIED PHYSICS LETTERS (2010)
Strain-enhanced photoluminescence from Ge direct transition
T. -H. Cheng et al.
APPLIED PHYSICS LETTERS (2010)
Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon
J. Mathews et al.
APPLIED PHYSICS LETTERS (2010)
Control of direct band gap emission of bulk germanium by mechanical tensile strain
M. El Kurdi et al.
APPLIED PHYSICS LETTERS (2010)
Enhanced photoluminescence of heavily n-doped germanium
M. El Kurdi et al.
APPLIED PHYSICS LETTERS (2009)
Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
Xiaochen Sun et al.
APPLIED PHYSICS LETTERS (2009)
Infrared emission from Ge metal-insulator-semiconductor tunneling diodes
M. H. Liao et al.
APPLIED PHYSICS LETTERS (2006)
Electroluminescence from metal/oxide/strained-Si tunneling diodes
MH Liao et al.
APPLIED PHYSICS LETTERS (2005)
Efficient silicon light-emitting diodes
MA Green et al.
NATURE (2001)
Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes
CW Liu et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
