期刊
APPLIED PHYSICS LETTERS
卷 98, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3556617
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资金
- Army Research Office [W911NF-09-C-0097]
- National Science Foundation [MRSEC DMR-0820521, MRI DMR-0922937, DMR-0907475]
- University of Nebraska-Lincoln
- J.A. Woollam Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907475] Funding Source: National Science Foundation
The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640 GHz to 1 THz in a AlGaN/GaN heterostructure using the optical-Hall effect at room temperature. Complementary midinfrared spectroscopic ellipsometry measurements are performed for analysis of heterostructure constituents layer thickness, phonon mode, and free-charge carrier parameters. The electron effective mass is determined to be (0.22 +/- 0.04)m(0). The high-frequency sheet density and carrier mobility parameters are in good agreement with results from dc electrical Hall effect measurements, indicative for frequency-independent carrier scattering mechanisms of the two-dimensional carrier distribution. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556617]
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