Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy

Using bulk sensitive hard x-ray photoelectron spectroscopy, we directly observe a spectrum related to N-As bonding defects in (Ga,In)(N,As)/Ga(N,As) heterostructure. The defects are most likely attributed to split interstitials. Their concentration is in the order of 10(19) cm(-3), close to the detection limit of the measurement. Rapid thermal annealing eliminates the defects, leading to those undetectable. Similar phenomenon is observed for N-P bonding defects in In (N,P). The results indicate common features in dilute nitride semiconductor system: existence of N-(group V) bonding defects and their behavior on postgrowth annealing. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573789]