期刊
APPLIED PHYSICS LETTERS
卷 98, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3540648
关键词
-
资金
- MEXT, Japan [18340104, 20045012]
- Grants-in-Aid for Scientific Research [18340104, 22540364, 20045012] Funding Source: KAKEN
Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon [7]phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, with a mobility of 0.75 cm(2) V(-1) s(-1) at 100 Torr of O(2). The O(2) gas-sensing effect is examined for the [7]phenacene FET and for the 1D hydrocarbon picene FET. These FETs' trap density and contact resistance are investigated with the multiple shallow trap and release model and the transfer line method. Unlike picene FETs, [7]phenacene FETs have few charge traps and are therefore air-stable. (C) 2011 American Institute of Physics. [doi:10.1063/1.3540648]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据