期刊
APPLIED PHYSICS LETTERS
卷 98, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3556622
关键词
-
资金
- U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences [DE-SC0000957]
Low-noise thermoelectric and electrical measurements were used to derive the dependences of Seebeck coefficient and hole mobility on carrier concentration and grain size in the bulk regions of thermally evaporated pentacene thin films (in contrast to the channel field-effect mobility typically measured using thin-film transistor geometries). Distinct charge transport regimes were observed for larger (0.5 and 0.8 mu m) and smaller (0.2 mu m) grain sizes, attributed to carrier-dopant scattering and percolation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556622]
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