期刊
APPLIED PHYSICS LETTERS
卷 99, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3616143
关键词
-
资金
- French ANR [ANR-09-NANO-016, ANR-10-BLAN-0304]
- Vietnam's National Foundation for Science and Technology Development (NAFOSTED) [103.02-2010.33]
- Agence Nationale de la Recherche (ANR) [ANR-10-BLAN-0304] Funding Source: Agence Nationale de la Recherche (ANR)
The I-V characteristics of graphene nanoribbon (GNR) p-n junctions have been investigated using atomistic quantum simulation. On the basis of results obtained for simple armchair GNR structures with large bandgap, it is suggested to improve significantly the device operation by inserting a small-bandgap section in the transition region between n and p zones. A giant peak-to-valley ratio (PVR) of negative differential conductance (higher than 10(3)) can be achieved in such hetero-junctions. Additionally, the PVR is proved to be weakly sensitive to the transition length and not strongly degraded by the edge disorder, which is an important feature regarding applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3616143]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据