相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
Woong Hee Jeong et al.
APPLIED PHYSICS LETTERS (2010)
The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor
Jang-Yeon Kwon et al.
APPLIED PHYSICS LETTERS (2010)
High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
Eugene Chong et al.
APPLIED PHYSICS LETTERS (2010)
Gate Bias Instability under Light Irradiation in Polycrystalline Silicon Thin-Film Transistors
Hidehito Kitakado et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors
C. H. Woo et al.
SURFACE & COATINGS TECHNOLOGY (2010)
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
Chang-Jung Kim et al.
APPLIED PHYSICS LETTERS (2009)
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
Jae-Heon Shin et al.
ETRI JOURNAL (2009)
Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
Jeong-Min Lee et al.
APPLIED PHYSICS LETTERS (2008)
Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors
Ching-Fang Huang et al.
IEEE ELECTRON DEVICE LETTERS (2008)
A new poly-Si TFT current-mirror pixel for active matrix organic light emitting diode
Jae-Hoon Lee et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs
KS Karim et al.
IEEE ELECTRON DEVICE LETTERS (2004)