期刊
APPLIED PHYSICS LETTERS
卷 99, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3619842
关键词
-
资金
- State Key Program for Basic Research of China [2007CB613206, 2011CB22004]
- National Natural Science Foundation of China [61006090, 10725418, 10734090, 10990104, 60976092]
- Shanghai Science and Technology Foundation [09DJ1400203, 09dz2202200, 10JC1416100, 10510704700]
We have investigated the plasmonic oscillations in GaN double-channel (DC) high electron mobility transistors (HEMTs). It is shown that the absorption peaks of DC-HEMT can exist in wider frequency regions than that of single channel HEMT. These absorption peaks appear as a result of excitation of elementary plasmon modes supported by separate channels and can be tuned for the entire terahertz domain. Significant resonant enhancement is also observed after varying the two-dimensional electron gas density in DC-HEMTs. These promising properties indicate that DC-HEMTs can have important applications as voltage tunable broadband terahertz detectors, intensity modulators, and filters. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3619842]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据