Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications

We propose a low power, high-performance nanoscale (phi = 150 nm) resistive memory device having a Ge2Sb2Te5/Ti/Pr0.7Ca0.3MnO3 (GST/Ti/PCMO) structure. As a thermoelectric heater and/or thermal barrier, GST accelerates the Ti/PCMO interfacial redox process thermally by enhancing the mobility of oxygen ions and minimizes the loss of local heat. Improvement of the memory performances and voltage-time dilemma issue is achieved by adopting this type of thermally assisted process. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3622656]