Self-assembled Si/SiO2 superlattice in Si-rich oxide films

This work involves as-prepared SiOx (x <= 2) films that were deposited by reactive sputtering. The regular Si/SiO2 superlattices were self-assembled without post-annealing. The periodicity of Si/ SiO2 superlattices was modulated by varying the oxygen flow rate and was associated with x in SiOx in the range 2-1.3. Si/SiO2 superlattices were formed under compressive stress and the factors that governed the periodicity were discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624706]