期刊
APPLIED PHYSICS LETTERS
卷 99, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3634010
关键词
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资金
- Government of India
- IBM India
We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 cm(2)/Vs-significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634010]
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