期刊
APPLIED PHYSICS LETTERS
卷 98, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3571447
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资金
- Army Research Office [W911-NF-09-1-0398]
- U.S. National Science Foundation [DMR-1006640]
- National Science Foundation [DMR 05-20415]
- UCSB
- NSF-NNIN network
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006640] Funding Source: National Science Foundation
We demonstrate, using high-mobility SrTiO3 thin films grown by molecular beam epitaxy, that stress has a pronounced influence on the electron mobility in this prototype complex oxide. Moderate strains result in more than 300% increases in the electron mobilities with values exceeding 120 000 cm(2)/V s and no apparent saturation in the mobility gains. The results point to a range of opportunities to tailor high-mobility oxide heterostructure properties and open up ways to explore oxide physics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571447]
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