Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

The interface trap density (D-it) and bonding of the HfO2/InP interface is investigated. The energy distribution of interface states extracted using capacitance-voltage measurements show a peak near midgap in InP and a tail, which extends into the InP conduction band. Both the D-it peak and the conduction band D-it increase with increasing post-deposition annealing temperature. A substantial increase in the native oxides with annealing temperature is observed with x-ray photoelectron spectroscopy. The possible bonding states responsible for the defects are presented. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656001]