We study the magnetic behavior of Fe3O4(111) thin films with thicknesses between 5 nm and 50 nm. The films are epitaxially grown on alpha-Al2O3(0001) single crystals by atomic-oxygen-assisted molecular beam epitaxy. The Fe3O4(111) thin films exhibit high structural order with sharp interfaces and low roughness and exhibit a Verwey transition for thicknesses above 8 nm. However, the samples have magnetic properties that deviate from the bulk ones. The magnetic moment varies between 2.4mu(B) for 5-nm-thick film and 3.2mu(B) for 50-nm-thick film in a field of 1.2 T, which is lower than that of bulk samples (4.1mu(B)/Fe3O4 formula). Still the magnetic saturation is never reached, even in fields as large as 2 T. The thinner the film, the slower the approach to saturation. Structural analysis, performed using high-resolution transmission electron microscopy, reveals the presence of antiphase boundaries (APB's), the density of which decreases when the thickness increases. Using a model of ferromagnetic domains separated by antiferromagnetically sharp interfaces, we show that the slow approach to saturation observed in the films as a function of thickness is driven by the APB density.
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