Pb0.4Sr0.6TiO3 (PST) thin films were deposited on high resistivity silicon substrate by radio frequency magnetron sputtering. A pure perovskite phase was obtained at a low post annealing temperature of 650 degrees C. The relative dielectric constant, loss factor, tenability, and figure of merit were determined over a large frequency range of 1 GHz to 60 GHz. A large tunability about 60% and a relatively low loss of 16% at 60 GHz were obtained. PST is an alternative material for microwave agile devices integrated with silicon and this is discussed from the standpoint of monolithic integration with a low thermal budget. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656065]
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