期刊
APPLIED PHYSICS LETTERS
卷 99, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3647622
关键词
aluminium; cathodoluminescence; defect states; II-VI semiconductors; photoluminescence; scanning tunnelling microscopy; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds
资金
- NSF/NNIN
- NSEC
- Harvard University Center for the Environment
We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor. (C) 2011 American Institute of Physics. [doi:10.1063/1.3647622]
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