期刊
APPLIED PHYSICS LETTERS
卷 99, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3651492
关键词
energy gap; gallium arsenide; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots
资金
- MEST
We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In0.2Ga0.8As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651492]
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