期刊
APPLIED PHYSICS LETTERS
卷 99, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3643155
关键词
bismuth compounds; dielectric polarisation; electric domain walls; epitaxial layers; ferroelectric materials; ferroelectric thin films; multiferroics; scanning probe microscopy
资金
- Department of Energy [DE-SC-0005037]
- Army Research Office [W911NF-08-2-0032]
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
Ferroelectric domain orientations have been mapped using piezo-force microscopy, allowing the calculation and statistical analysis of interfacial polarization angles, the head-to-tail or head-to-head configuration, and any cross-coupling terms. Within 1 mu m(2) of an epitaxial (001)(p)-oriented BiFeO(3) film, there are >40 mu m of linear domain boundary based on over 500 interfaces. 71 degrees domain walls dominate the interfacial polarization angles, with a 2:1 preference for uncharged head-to-tail versus charged head-to-head boundary types. This mapping technique offers a unique perspective on domain boundary distributions, important for ferroelectric and multiferroic applications where domain wall parameters are critical. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643155]
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