期刊
APPLIED PHYSICS LETTERS
卷 99, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3651761
关键词
gallium arsenide; gallium compounds; hydrogen; III-V semiconductors; interstitials; magnetic resonance; passivation; quenching (thermal); semiconductor epitaxial layers; semiconductor quantum wells; wide band gap semiconductors
Effects of hydrogen on the recently discovered defect-engineered spin filtering in GaNAs are investigated by optical spin orientation and optically detected magnetic resonance. Post-growth hydrogen treatments are shown to lead to nearly complete quenching of the room-temperature spin-filtering effect in both GaNAs epilayers and GaNAs/GaAs multiple quantum wells, accompanied by a reduction in concentrations of Ga-i interstitial defects. Our finding provides strong evidence for efficient hydrogen passivation of these spin-filtering defects, likely via formation of complexes between Gai defects and hydrogen, as being responsible for the Observed strong suppression of the spin-filtering effect after the hydrogen treatments. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651761]
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