期刊
APPLIED PHYSICS LETTERS
卷 98, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3595683
关键词
-
资金
- JSPS
We report on evaluation of transfer accuracy in a single-electron turnstile using silicon nanowire metal-oxide-semiconductor field-effect transistors at 17 K. Single-electron shuttle transfer and single-shot detection of a single electron are used to detect errors of the transfer. Errors for the transfer through an electrostatically formed island are ascribed to thermal processes. We also observed single-electron transfer mediated by a trap level, which exhibits a wide current plateau and a low error rate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595683]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据