期刊
APPLIED PHYSICS LETTERS
卷 98, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3597360
关键词
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资金
- National Science Foundation [DMR-0520651, DMR-0804915]
- Universita di Catania
- U.S. Department of Energy [DE-SC0001556]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0804915] Funding Source: National Science Foundation
We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1-4 A/W are achieved in the 500-900 nm wavelength range with internal quantum efficiencies (IQEs) as high as similar to 700%. We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3597360]
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