Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10(1)over-bar(1)over-bar) GaN substrate

Pulsed laser atom probe tomography (APT) of InxGa1-xN single quantum well (SQW) grown on semipolar (10 (1) over bar(1) over bar) GaN orientation estimates the interior atomic composition within the SQW at 6.5 +/- 0.7 at. % In, 46.2 +/- 0.7 at. % Ga, and 47.3 +/- 0.7 at. % N. The atom probe analysis is performed in both top-down and cross-section orientations. Self-consistent Schrodinger-Poisson simulation employing structural and compositional parameters obtained from APT results estimates the polarization field within the SQW at 720 kV/cm. A statistical method for the evaluation of indium homogeneity within the SQW is also considered. (C) 2011 American Institute of Physics. [doi:10.1063/1.3589370]