Multiple negative differential resistance and the modulation in a nanotubelike fullerene D5h(1)-C90

We have preformed a first-principle calculation on the electronic transport properties of a recently synthesized nanotubelike fullerene D-5h(1)-C-90. One finds three negative differential resistance regions in the I-V curve, which could be modulated by gate voltage and contact configuration. Further analysis showed that, the charge transfer and molecule-electrode coupling, induced by both bias and gate voltages, are responsible for the observed phenomena. (C) 2011 American Institute of Physics. [doi:10.1063/1.3582238]