Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se2 growth

Atomic scale chemistry of polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin film has been characterized at key points of the 3-stage process using atom probe tomography. 3D atom distributions have been reconstructed when the layer is Cu-poor ([Cu]/([Ga] vertical bar [In]) < 1), Cu-rich ([Cu]/([Ga] vertical bar [In]) > 1), and at the end of the process. Particular attention has been devoted to grain boundary composition and Na atomic distribution within the CIGSe layer. Significant variation of composition is highlighted during the growing process, providing fundamental information helping the understanding of high efficiency CIGSe formation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665948]