期刊
APPLIED PHYSICS LETTERS
卷 99, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3664112
关键词
contact resistance; frequency multipliers; graphene; organic field effect transistors
资金
- DARPA CERA through IBM-UT
- ONR
- Texas Instruments scholarship
The conversion efficiency of field-effect transistors with even-odd symmetry is elucidated in this work. From symmetry considerations, this work reveals that even symmetry, due to electron-hole symmetry in graphene, affords efficient even-harmonic multiplication. Odd symmetry, associated with linear charge transport, affords suppression of odd-harmonic signals. For the ideal symmetric transistor multiplier, conversion efficiency with relatively large power gain is achievable, while for practical graphene transistors, the efficiency can be substantially less than unity due to non-idealities such as contact resistance, high impurity densities, and low gate capacitance. In the quantum capacitance limit of graphene transistor, near-lossless conversion efficiency is available. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664112]
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