4.6 Article

Wurtzite ZnO (001) films grown on cubic MgO (001) with bulk-like opto-electronic properties

期刊

APPLIED PHYSICS LETTERS
卷 99, 期 14, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3647846

关键词

II-VI semiconductors; molecular beam epitaxial growth; plasma materials processing; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; solid-state phase transformations; transmission electron microscopy; wide band gap semiconductors; zinc compounds

资金

  1. Specialized Research Fund for the Doctoral Program of Higher Education [20100121120026]
  2. Natural Science Foundation of Fujian Province, China [2010J05138]
  3. Program for New Century Excellent Talents in University (NCET) [NCET-09-0680]
  4. U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]

向作者/读者索取更多资源

We report the growth of ZnO (001) wurtzite thin films with bulk-like opto-electronic properties on MgO (001) cubic substrates using plasma-assisted molecular beam epitaxy. In situ reflection high-energy electron diffraction patterns and ex situ high resolution transmission electron microscopy images indicate that the structure transition from the cubic MgO substrates to the hexagonal films involves 6 ZnO variants that have the same structure but different orientations. This work demonstrates the possibility of integrating wurtzite ZnO films and functional cubic substrates while maintaining their bulk-like properties. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647846]

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