期刊
APPLIED PHYSICS LETTERS
卷 99, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3647846
关键词
II-VI semiconductors; molecular beam epitaxial growth; plasma materials processing; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; solid-state phase transformations; transmission electron microscopy; wide band gap semiconductors; zinc compounds
资金
- Specialized Research Fund for the Doctoral Program of Higher Education [20100121120026]
- Natural Science Foundation of Fujian Province, China [2010J05138]
- Program for New Century Excellent Talents in University (NCET) [NCET-09-0680]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]
We report the growth of ZnO (001) wurtzite thin films with bulk-like opto-electronic properties on MgO (001) cubic substrates using plasma-assisted molecular beam epitaxy. In situ reflection high-energy electron diffraction patterns and ex situ high resolution transmission electron microscopy images indicate that the structure transition from the cubic MgO substrates to the hexagonal films involves 6 ZnO variants that have the same structure but different orientations. This work demonstrates the possibility of integrating wurtzite ZnO films and functional cubic substrates while maintaining their bulk-like properties. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647846]
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