期刊
APPLIED PHYSICS LETTERS
卷 99, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3650473
关键词
buffer layers; carrier lifetime; III-V semiconductors; indium compounds; lattice constants; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth
资金
- NSF [DMR0710154]
- ARO [W911NF11-1-0109]
Unrelaxed InAs1-xSbx layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs1-xSbx with given X. The InAs0.56Sb0.44 layers demonstrate photoluminescence peak at 9.4 mu m at 150 K. The minority carrier lifetime measured at 77K for InAs0.8Sb0.2 was tau = 250 ns. (C) 2011 American Institute of Physics. [doi:10.1063/1.3650473]
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