期刊
APPLIED PHYSICS LETTERS
卷 99, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3638468
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资金
- NSF [CMMI-0825531, EEC-0832819]
- DARPA [N66001-10-1-4004]
Synthesis of silicon carbide-derived carbon films with excellent supercapacitor characteristics is demonstrated by a process that is fully compatible with standard microfabrication technology. NiTi alloy deposited on nitrogen-doped polycrystalline SiC films is shown to result in the growth of a rough, porous, high conductivity, nanocrystalline graphitic carbon film upon rapid thermal annealing to 1050 degrees C. Electrodes fabricated in this manner exhibit high charge/discharge rates with a time constant of about 0.062 s. Analysis shows that the incorporated nitrogen in the carbon electrode may induce pseudo-capacitance, and the electrodes exhibit the capacitance/area values comparable to those reported on carbon nanotube-based supercapacitors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3638468]
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