期刊
APPLIED PHYSICS LETTERS
卷 99, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3634029
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资金
- Danish Research Council
- Danish Research Council through the Villum Kann Rasmussen center of excellence NATEC
- European Commission [252890]
The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]
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