4.6 Article

Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3 heteroepitaxial thin films

期刊

APPLIED PHYSICS LETTERS
卷 99, 期 10, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3634028

关键词

dielectric depolarisation; dislocations; elasticity; electric domains; epitaxial layers; ferroelectric materials; ferroelectric thin films; lead compounds; transmission electron microscopy

资金

  1. U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]
  2. NSF [DMR 0520495 (CRISP), DMR 1006256]

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We describe a transmission-electron-microscopy study of the ferroelectric domains in an epitaxial Pb(Zr0.2Ti0.8)O-3 (PZT) film grown on La0.7Sr0.3MnO3/SrTiO3(001). We directly observe the pinning of 90 degrees domain walls by pairs of misfit dislocations, respectively, with Burgers vectors a [100] and a [001]. Model calculations based on the elastic theory confirm our finding that, in addition to the depolarization field surrounding the dislocation, the strain field of misfit dislocation-pairs plays the primary role in the formation and pinning of a domains. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634028]

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