相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure
Seong-Dong Kim
SOLID-STATE ELECTRONICS (2009)
Sub-0.1-eV effective schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
Hoong-Shing Wong et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal
Zhen Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation
QT Zhao et al.
APPLIED PHYSICS LETTERS (2005)
Efficient hybrid density functional calculations in solids: Assessment of the Heyd-Scuseria-Ernzerhof screened Coulomb hybrid functional
J Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2004)
Removal of dangling bonds and surface states on silicon(001) with a monolayer of selenium
M Tao et al.
APPLIED PHYSICS LETTERS (2003)
Recent advances in Schottky barrier concepts
RT Tung
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Surface reconstructions on the (100) CoSi2 surface
SD Kenny et al.
SURFACE SCIENCE (2000)
分享论文
