期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 16, 期 11, 页码 2424-2426出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2004.835623
关键词
GaInASsh-AlGaAsSb; quantum-well (QW) lasers; semiconductor lasers
A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 mum were fabricated and tested. An internal losses coefficient as low as 4 cm(-1) and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm(2). The threshold current density per quantum well is as low as 34 A/cm(2) for a 3-mm-long cavity.
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